JCV1

Information about JCV1

Published on September 27, 2007

Author: Burnell

Source: authorstream.com

Content

Detector slab assembling :  Detector slab assembling General view PCB, chip Si Wafer Gluing Passive component Schedule Slide2:  Al. Shielding PCB (multi-layers) ( 2.4 mm) Silicon wafer (0.525 mm) Tungsten (1.4 mm, 2×1.4 or 3×1.4 mm) 8.5 mm Composite structure (0.15 mm / layer) Transverse view Detector slab PCB : 14 layers Thickness 2.4 mm Sizes of the structure : Slab:  Sizes of the structure : Slab 8,3 mm Aluminum foil : ~0.1 mm PCB : 2.4 mm Wafer : 0.525 mm Carbon fiber : 0.15 mm W plate : 1.4 mm Slide4:  PCB Chip PCB, Chip : still in progress Talk : Julien Fleury Slide5:  Si Wafer : One wafer is a Matrix of 6 x 6 pixel of 1 cm2. Important point : manufacturing must be as simple as possible to be near of what could be the real production for full scale detector in order to : Keep lower price (a minimum of step during processing) Low rate of rejected processed wafer good reliability and large robustness Number of active Wafer needed for the physic prototype : 270. 150 will be produce by Institute of Nuclear Physics - Moscow State University 150 will be produce by Institute of Physics, Academy of Sciences of the Czech Republic - Prague Slide6:  ECAL prototype silicon wafer description Dead zone width is only 1mm 4” High resistive wafer : 5 Kcm Thickness : 525 microns  3 % Tile side : Guard ring In Silicone ~80 e-h pairs / micron  42000 e- /MiP Capacitance : ~25 pF Leakage current : 1 – 5 nA Full depletion bias : ~150 V Nominal operating bias : 200 V Si Wafer : production:  Si Wafer : production Institute of Nuclear Physics - Moscow State University First test production with 43 wafers (February 03)  39 good (leakage current less than 3 nA) Delivery of 100 “good” wafers in end of November 03 Institute of Physics, Academy of Sciences of the Czech Republic – Prague Talk from V.Vrba “Silicon wafers - design/production in Praha” Wafer production Institute of Nuclear Physics - Moscow State University:  Wafer production Institute of Nuclear Physics - Moscow State University Leakage curent (nA) Capacitance : ~25 pF Leakage current : 1 – 5 nA Full depletion bias : ~150 V Nominal operating bias : 200 V Wafer production : Institute of Nuclear Physics - Moscow State University:  Wafer production : Institute of Nuclear Physics - Moscow State University Wafer production Institute of Nuclear Physics - Moscow State University:  Wafer production Institute of Nuclear Physics - Moscow State University Gluing of Si wafer:  Gluing of Si wafer A automatic device is use to deposit the conductive glue : X-Y-Z table (400×400×150 mm3) with glue dispensing tool (conductive glue) Gluing and placement ( 0.1 mm) of 270 wafers with 6×6 pads About 10 000 points of glue. Gluing of Si wafer:  Gluing of Si wafer Choice of the Glue : Good conductivity Polymerization at low temperature (Typ. ~ 40° C) Time of polymerization Some test : First : PCB on PCB : started Second : with real Si wafer : to be done ! EPO-TEK® EE129-4 : Room temp/16 hr cure: 0.0096 ohm-cm Room temp/20 hr cure: 0.0090 ohm-cm Room temp/72 hr cure: 0.003 ohm-cm Gluing of Si wafer : Preliminary results : PCB/PCB, T=25° C:  Gluing of Si wafer : Preliminary results : PCB/PCB, T=25° C ~ 0.5 mm3 ~ 4 mm3 Gluing of Si wafer : Preliminary results : PCB/PCB, R = F(T):  Gluing of Si wafer : Preliminary results : PCB/PCB, R = F(T) Slide15:  PCB Wafers The aluminium sheet is the ground Aluminium sheet Amorphous silicon deposition  Resistance  Capacitance (AC coupling) Yvan Bonnasieux Physique des Interfaces et Couches Minces - Ecole Polytechnique - Palaiseau Passive component on the wafer ::  Passive component on the wafer : Capacitance : Dielectric : silicone nitrite Refractive index : n=2 Thickness : e = 2 m Resistance : material : aSiH Resistivity : =1011 .cm Thickness : l = 2 m C= 1,32 nF R= 102 M The passive component on the wafer will be not use for the physic prototype. Passive component will be discrete capacitances and resistances on the PCB. Physic Prototype : Planning:  Physic Prototype : Planning Physic Prototype : Planning:  Physic Prototype : Planning 2003 2004 Point to be discuss today ::  Point to be discuss today : Wafer production Mechanics for the Test Beam Cosmic test Event Builder …

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